ADELPHI, Md., Nov. 25, 2025 — A numerical model for designing Geiger-mode 4H-silicon carbide avalanche photodiodes (GM-4H-SiC-APDs) in near-ultraviolet (NUV) wavelength ranges, developed by researchers at the DEVCOM U.S. Army Research Laboratory, could resolve several issues that typically arise when APDs are used to detect photons at the longer UV wavelengths.
4H-SiC APDs demonstrate high sensitivity in the deep ultraviolet (DUV) range. However, longer wavelengths require APDs with specially-designed architectures to improve unity-gain quantum efficiency (QE) so that single-photon sensitivity can be maintained. Read More